C4172 전자부품 데이터시트

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.),

Ordering number:ENN2557B NPN Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ. · Adoption of FB

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC4118 Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1588 Ab

Ordering number:EN2479A Features · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifications Absolu