C3M0065090J
Cree
Silicon Carbide Power MOSFET VDS 900 V
C3M0065090J
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • New low impedance package with driver s
C3M0065090D
Silicon Carbide Power MOSFET VDS 900 V
C3M0065090D
ID @ 25˚C
36 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low
Cree
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