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C3554 전자부품 데이터시트



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C3554  

Renesas
Renesas

C3554

NPN Transistor - 2SC3554

DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or




관련 부품 C35 상세설명

C35G  

  
Diode 400V 35A Die



New Jersey Semiconductor
New Jersey Semiconductor

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C3563  

  
NPN Transistor - 2SC3563

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High sp



Inchange Semiconductor
Inchange Semiconductor

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C35F  

  
SILICON CONTROLLED RECTIFIER

C35 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standar



Digitron Semiconductors
Digitron Semiconductors

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C35F  

  
Diode 100V 35A Die



New Jersey Semiconductor
New Jersey Semiconductor

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C35E  

  
Diode 100V 35A Die



New Jersey Semiconductor
New Jersey Semiconductor

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C35DX797  

  
Diode 200V 35A Die



New Jersey Semiconductor
New Jersey Semiconductor

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