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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2965 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 si
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications 2SC2996 Unit: mm · High stability oscillation voltage on FM local oscillator · Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = 25°C) Characteristics C
Ordering number:EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features · Fast switching speed. · High breakdown voltage. Package Dimensions unit:mm 2033 [2SA1481/2SC2960] ( ) : 2SA1481 B : Base C : Collector E : Emitter SANYO : SPA Condi
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications 2SC2995 Unit: mm · High stability oscillation voltage on FM local oscillator. · Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta = 25°C) Characteristics Col
Ordering number:EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features · FBET series. · Very small-sized package permitting sets to be small- sized and slim. · High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). Package Dimensions unit:mm 2033 [2SC2999]
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