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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementar
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
C24W1TN - C28W1TN - C32W1TN - C24W410SN WIDE SCREEN COLOUR TELEVISION INSTRUCTION BOOKLET w w w .d e e h s a t a . u t4 m o c TV Introduction Dear Hitachi Customer, Congratulations on your purchase of the very latest ‘state of the art’ wide screen television from HIT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substr
Ordering number:EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features · Very small package enabiling compactness and slimness of sets. · High fT and small cre (fT=320MHz typ, cre=0.95pF typ). Package Dimensions unit:mm 2033 [2SC2839] Specifications Absolute
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PartNumber.co.kr | 2020 | 연락처 |