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2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) Absolute Maximum Ratings (T
2SC2769 TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor Solid State Relay General purpose power amplifiers JEDEC EIAJ
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2738 DESCRIPTION ·With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DE 1 2 3 Base Collector;connected
2SC2736 Silicon NPN Epitaxial Application • UHF/VHF frequency converter • Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2736 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current
Silicon Epitaxial Planar Transistor FEATURES z High power gain z Recommended for FM IF,OSC stage and AM CONV.IF stage Pb Lead-free APPLICATIONS z High Frequency Amplifier Applications Production specification 2SC2715 ORDERING INFORMATION Type No. Marking 2SC2715 RR1/RO1/RY1 SOT-23 Package
HG Semiconductors 2sc2783HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998
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