C1815
SeCoS
NPN Plastic Encapsulated TransistorElektronische Bauelemente
C1815
200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor
FEATURE
Power Dissipation
MARKING: HF
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATING
C1815
WEITRON
NPN Plastic-Encapsulate TransistorsC1815
NPN Plastic-Encapsulate Transistors
P b Lead(Pb)-Free
FEATURES Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltag
C1815
RECTRON
NPN TransistorC1815
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.15
mA
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range TJ,Tstg: -55OC to +
C1815
Jiangsu Changjiang Electronics Technology
Plastic Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C1815
FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltag
C1815
Toshiba Semiconductor
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)2SC1815
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
• • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE li
C1815
Shanghai
Silicon NPN Epitaxial Transistor
C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1
C1815
WILLAS
SOT-23 Plastic-Encap sulate TransistorsWILLAS
SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
FM120-M &115 THRU
FM1200-
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
TRANSISTO•RLboe(wtNt e
C1815-G
Comchip Technology
General Purpose transistorsGeneral Purpose Transistors
COMCHIP
SMD Diodes Specialist
C1815-G (NPN)
RoHS Device
Features
-Power dissipation P CM =0.2W
0.056(1.40) 0.047(1.20)
SOT-23
0.119(3.00) 0.110(2.80)
3
Marking: HF
Collector 3
0.044(1.10) 0.035(0.90)
1
0.083(2.10) 0.066(1.70)