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C1815 전자부품 데이터시트



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기능 검색 결과



C1815  

SeCoS
SeCoS

C1815

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor FEATURE Power Dissipation MARKING: HF RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATING



C1815  

WEITRON
WEITRON

C1815

NPN Plastic-Encapsulate Transistors

C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag



C1815  

RECTRON
RECTRON

C1815

NPN Transistor

C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +



C1815  

Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology

C1815

Plastic Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltag



C1815  

Toshiba Semiconductor
Toshiba Semiconductor

C1815

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE li



C1815  

Shanghai
Shanghai

C1815

Silicon NPN Epitaxial Transistor

C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1



C1815  

WILLAS
WILLAS

C1815

SOT-23 Plastic-Encap sulate Transistors

WILLAS SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M &115 THRU FM1200- Pb Free Prod Features • Batch process design, excellent power dissipation offers TRANSISTO•RLboe(wtNt e



C1815-G  

Comchip Technology
Comchip Technology

C1815-G

General Purpose transistors

General Purpose Transistors COMCHIP SMD Diodes Specialist C1815-G (NPN) RoHS Device Features -Power dissipation P CM =0.2W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Marking: HF Collector 3 0.044(1.10) 0.035(0.90) 1 0.083(2.10) 0.066(1.70)



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