BZT52C13 전자부품 데이터시트

BZT52C2V4-BZT52C39 0.5W Zener Diodes SOD-123 Features — Planar Die Construction — 500mW Power Dissipation on Ceramic PCB — General Purpose, Medium Current — Ideally Suited for Automated Assembly Processes Mechanical Data — Case: SOD-123, Plastic — UL F

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  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BZT52C2V4 THRU BZT52C39 410 mW Zener Diodes 2.4 to 39 Volts Planar Die construction 410mW Power Dissipation Zener Voltage

BZT52C Series SILICON PLANAR ZENER DIODES Features • Ideally Suited for Automated Assembly Processes • Total power dissipation: max. 500 mW LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature R

www.vishay.com BZT52-Series Vishay Semiconductors Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Int. construction 2.4 to 75 2.5; 5 Pulse current Single UNIT V mA FEATURES • Silicon

Small Signal Product BZT52C2V4 thru BZT52C75 Taiwan Semiconductor 5% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compoun

410mW Two Terminals SMD Zener Diodes BZT52C2V4 – BZT52C51 410mW Two Terminals SMD Zener Diodes Features • Planar Die Construction • 410mW Power Dissipation • Zener Voltage 2.4v to 51v • RoHS Compliance Mechanical Data Case: SOD-123, molded plastic

BZT52C2V4 ... BZT52C75 (500 mW) BZT52C2V4 ... BZT52C75 (500 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2015-03-10 1 .1 ±0.1 0 . 6 ± 0.1 Maximum power dissipation 2.7±0.1 Maximale Ver

HITANO ENTERPRISE CORP. BZT52C2V4 THRU BZT52C39 TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON ZENER DIODES FEATURES * Planar Die construction * Zener Voltages from 2.4V - 39V * 410mW Power Dissipation * Ideally Suited for Automated Assembly Processes SO