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Datasheet BYX134G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BYX134G | High-voltage car ignition diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX134G High-voltage car ignition diode
Product specification Supersedes data of 1998 Dec 04 2000 Feb 29
Philips Semiconductors
Product specification
High-voltage car ignition diode
FEATURES • Glass passivated • High maximum operating temperature |
 NXP Semiconductors |
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| 3 | BYX134GL | High-voltage car ignition diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D458
BYX134GL High-voltage car ignition diode
Product specification 2000 Feb 29
Philips Semiconductors
Product specification
High-voltage car ignition diode
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • E |
NXP Semiconductors |
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| 2 | BYX134GP | High-voltage car ignition diodes DISCRETE SEMICONDUCTORS
DATA SHEET
M3D350
BYX134GP High-voltage car ignition diodes
Product specification 1998 Dec 04
Philips Semiconductors
Product specification
High-voltage car ignition diodes
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current � |
NXP Semiconductors |
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| 1 | BYX134GPS | High-voltage car ignition diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D350
BYX134GPS High-voltage car ignition diode
Product specification 2000 Jan 13
Philips Semiconductors
Product specification
High-voltage car ignition diode
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • |
NXP Semiconductors |
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