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Datasheet BYW51-200 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | BYW51-200 | Ultrafast Rectifier ( Diode ) Ultrafast Rectifier
INCHANGE Semiconductor
BYW51-200
FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Dual |
Inchange Semiconductor |
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3 | BYW51-200 | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES ®
BYW51/F/G/FP-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS
n
PRELIMINARY DATASHEET
2 x 10 A 200 V 150 °C 0.85 V 25 ns
A1 K A2
n
n
n
n
SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITC |
STMicroelectronics |
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2 | BYW51-200 | 8A/ 100V - 200V Ultrafast Dual Diodes BYW51-100, BYW51-150, BYW51-200
June 1995 File Number 1412.2
8A, 100V - 200V Ultrafast Dual Diodes
The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers (tRR < 35ns). They use a planar ion-implanted epitaxial construction. These devices are intended for use as outpu |
Intersil Corporation |
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1 | BYW51-200 | Power Rectifier
BYW51−200 SWITCHMODEt Power Rectifier
Features and Benefits
• • • • • •
Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 16 A Total (8 A Per Diode Leg) Pb−Free Packages are Available*
http://onsemi.co |
ON Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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