|
|
Datasheet BYV38 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BYV38 | FAST RECOVERY RECTIFIER BL GALAXY ELECTRICAL
FAST RECOVERY RECTIFIER
BYV37---BYV38
VOLTAGE RANGE: 800 --- 1000 V CURRENT: 2.0 A
FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U |  GALAXY ELECTRICAL | rectifier |
| 2 | BYV38 | 2.0A Axial Leaded Fast Recovery Rectifier BYV37-BYV38
2.0A Axial Leaded Fast Recovery Rectifier
Features
· Low cost · Diffused junction · Low leakage · Low forward voltage drop · High current capability · Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents · The plastic material carries U/L recognition 94V-0
Mechanica |  SUNMATE | rectifier |
| 3 | BYV38 | Fast Avalanche Sinterglass Diode www.vishay.com
BYV37, BYV38
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
949539
MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
FEATURES • Glass |  Vishay Telefunken | diode |
BYV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BYV-100 | RECTIFIERS Microsemi Corporation rectifier | | |
| 2 | BYV-150 | RECTIFIERS Microsemi Corporation rectifier | | |
| 3 | BYV-50 | RECTIFIERS Microsemi Corporation rectifier | | |
| 4 | BYV10 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p  NXP Semiconductors diode | | |
| 5 | BYV10-20 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | | |
| 6 | BYV10-20 | Diode Schottky 20V 1A 2-Pin SOD-81 New Jersey Semiconductor diode | | |
| 7 | BYV10-30 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | |
| Esta página es del resultado de búsqueda del BYV38. Si pulsa el resultado de búsqueda de BYV38 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |