BUZ80FI
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORBUZ80 BUZ80FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ80 BUZ80FI
s s s s s s s
V DSS 800 V 800 V
R DS( on) < 4Ω < 4Ω
ID 3.4 A 2.1 A
TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE D
BUZ80
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)BUZ 80
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 80
VDS
800 V
ID
3.1 A
RDS(on)
4Ω
Package TO-220 AB
Ordering Code C67078-S1309-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 3.1 Unit A
ID IDp
Siemens Semiconductor Group
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BUZ80A
SIPMOS Power Transistor (N channel Enhancement mode)BUZ 80A
SIPMOS ® Power Transistor
• N channel • Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 80A
VDS
800 V
ID
3A
RDS(on)
3Ω
Package TO-220 AB
Ordering Code C67078-A1309-A3
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 800 800 Unit V
VDS VDGR
Siemens Semiconductor Group
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BUZ80A
N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR®
BUZ80A
N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
TYPE BUZ80A
V DSS 800 V
R DS(on) <3Ω
ID 3.8 A
s s s s s s s
TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE C
STMicroelectronics
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