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Datasheet BUZ80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | BUZ80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR BUZ80 BUZ80FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ80 BUZ80FI
s s s s s s s
V DSS 800 V 800 V
R DS( on) < 4Ω < 4Ω
ID 3.4 A 2.1 A
TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW G |
 STMicroelectronics |
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| 7 | BUZ80 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 80
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 80
VDS
800 V
ID
3.1 A
RDS(on)
4Ω
Package TO-220 AB
Ordering Code C67078-S1309-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 3.1 Unit A
ID IDp |
 Siemens Semiconductor Group |
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| 6 | BUZ80 | Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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| 5 | BUZ80A | Power Transistor |
 Infineon |
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