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Datasheet BUZ72A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | BUZ72A | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS BUZ72A
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE BUZ72A
s s s s s s s
V DSS 100 V
R DS( on) < 0.25 Ω
ID 11 A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEM |
 STMicroelectronics |
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| 6 | BUZ72A | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 72 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 72 A
VDS
100 V
ID
9A
RDS(on)
0.25 Ω
Package TO-220 AB
Ordering Code C67078-S1313-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 9 Unit A
ID |
 Siemens Semiconductor Group |
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| 5 | BUZ72A | 9A/ 100V/ 0.250 Ohm/ N-Channel Power MOSFET BUZ72A
Data Sheet June 1999 File Number 2262.2
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for hi |
 Intersil Corporation |
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| 4 | BUZ72A | SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 72A
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
100 V
ID
9A
RDS(on)
0.25 Ω
Package
Ordering Code
BUZ 72 A
TO-220 AB
C67078-S1313-A3
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC |
 Infineon Technologies AG |
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