|
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTD882T3/S Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics �
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTD882T3/S Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics �
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 BTD882I3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics •
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 BTD882D3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics �
CYStech Electronics Corp. Low VCE(sat) NPN Epitaxial Planar Transistor Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 1/4 BTD882AM3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4 BTD882SA3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics •
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |