Datasheet BTC4505A3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BTC4505A3	High Voltage NPN Epitaxial Planar Transistor CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 1/4 BTC4505A3 Features • High breakdown voltage. (BVCEO = 400V) • Low saturation voltage, typically VCE(sat) = 0.1V at IC	Cystech Electonics Corp

BTC450 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BTC4505N3	High Voltage Transistor (NPN) High Voltage Transistor (NPN) BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C COMCHIP www.comchiptech.com COLLECTOR 3 1 BASE SOT-23 .119 (3.0) .110 (2.8) 2 EMITTER .020 (0.5) Top View .056 (1.40	Comchip Technology
BTC4505N3	High Voltage NPN Epitaxial Planar Transistor CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 BTC4505N3 Features • High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE	Cystech Electonics Corp
BTC4505M3	High Voltage NPN Epitaxial Planar Transistor CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 1/5 BTC4505M3 Features • High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE(	Cystech Electonics Corp

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Número de pieza	Descripción	Fabricantes	PDF
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