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® BTA/BTB16 and T16 Series 16A TRIACS SNUBBERLESS™ , LOGIC LEVEL & STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 16 600, 700 and 800 10 to 50 Unit A V G A2 A1 A2 mA A1 A2 G DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 tria
CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C306C3 Issued Date : 2004.03.03 Revised Date : Page No. : 1/4 BTA1774C3 Description • The BTA1774C3 is designed for use in driver stage of AF amplifier and general purpose amplification. �
CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 BTA1759N3 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.2V at Ic
BTA12-600CW3G, BTA12-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 12 A RMS at 25°C • Unifor
CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/4 BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V •
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