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BSZ086P03NS3G  

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BSZ086P03NS3G

Power MOSFET ( Transistor )

BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant




관련 부품 BSZ086P03NS 상세설명

BSZ086P03NS3EG  

  
Power MOSFET ( Transistor )

BSZ086P03NS3E G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: ba



Infineon
Infineon

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