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Datasheet BSZ086P03NS3EG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | BSZ086P03NS3EG | Power MOSFET ( Transistor ) BSZ086P03NS3E G
OptiMOSTM P3 Power-Transistor
Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: ba |
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BSZ086P03NS Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
BSZ086P03NS3G | Power MOSFET ( Transistor ) |
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BSZ086P03NS3EG | Power MOSFET ( Transistor ) |
Infineon |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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