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Datasheet BSX39 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BSX39 | Bipolar NPN Device BSX39
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar NPN Device.
VCEO |
 Seme LAB |
 |
| 2 | BSX39 | SWITCHING TRANSISTOR BSX39
MAXIMUM RATINGS
Rating
Collector-Emitter Voftage
—Collector Current Continuous
Symbol VCEO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T/ = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
RflJA
•Pa |
 Motorola Semiconductors |
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| 1 | BSX39 | HIGH-SPEED SATURATED SWITCH BSX39
HIGH-SPEED SATURATED SWITCH
DESCRIPTION The BSX39 is a silicon planar epitaxial NPN tran-sistor in Jedec TO-18 metal case. It is designed for very fast switching applications up to 500 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO IC Pto t
Tstg, Tj
Para |
 SGS-THOMSON |
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