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Datasheet BSW67 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BSW67 | Bipolar NPN Device BSW67
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (TO |
 Seme LAB |
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| 5 | BSW67 | NPN switching transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSW66A; BSW67A; BSW68A NPN switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES • High cur |
 NXP Semiconductors |
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| 4 | BSW67A | Bipolar NPN Device BSW67A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
Seme LAB |
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| 3 | BSW67A | NPN SILICON TRANSISTOR T
BSW66A BSW67A BSW68A
CASE 79, STYLE 1 TO-39 (TO-205AD)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol BSW BSW BSW
66A 67A 68A
Collector-Emitter Voltage
VCEO 100 120 150
Collector-Base Voltage
VCBO 100 120 150
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipat |
 Motorola Semiconductors |
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