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SMD Type TransistIoCrs Features High current (max. 100 mA). Low voltage (max. 12 V). NPN Switching Transistor BSV52 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.12.4 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3
BSV52 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) SWITCHING TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VcEO vCBO vEBO • "C THERMAL CHARACTERISTICS Characteristic •Total Device Dis
BSV52LT1 Switching Transistor NPN Silicon Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Collector Current − Continuous Symbol VCEO VCBO IC Value 12 20 100 Unit Vdc Vdc mAdc http://onsemi.com COLLECTO
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSV52LT1/D Switching Transistor NPN Silicon 1 BASE COLLECTOR 3 BSV52LT1 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Collector Current — Continuous Symbol VCEO VCBO IC Value 12 2
BSV52 BSV52 C E SOT-23 Mark: B2 B NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage
BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS Type BSV52 SO2369 SO 2369A s Marking B2 N11 N81 s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS. 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGR
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