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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the Greenline™ Portfolio of devices with energy–conserv- ing traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS proces
SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
BSS84 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered
BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) “Green” Device (Note 4) Mechanical Data • • • • • • �
Preliminary data BSS84PW SIPMOS ® Small-Signal-Transistor Features · P-Channel Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current · Enhancement mode VDS RDS(on) ID 3 -60 8 -0.15 V · Avalanche rated · Logic Level · dv/dt rated W A 2 1 VSO05
Final data BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary VDS RDS(on) ID 3 · P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated -60 8 -0.17 SOT-23 V W A 2 1 VPS05161 Drain pin 3 Type BSS 84 P Package SOT-23 Ordering Code Q67041-S1417 Mark
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