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Datasheet BSS75 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BSS75 | HIGH VOLTAGE TRANSISTOR T
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THER |  Motorola Semiconductors | transistor |
| 2 | BSS75 | Bipolar PNP Device BSS75
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar PNP Device.
VCEO |  Seme LAB | data |
| 3 | BSS75 | PNP SILICON HIGH VOLTAGE TRANSISTOR BSS74 BSS75 BSS76
DATA SHEET
PNP SILICON HIGH VOLTAGE TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.
MAXIMUM |  Central Semiconductor | transistor |
BSS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BSS100 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 100
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D
VDS
100 V
ID
0.22 A
RDS(on)
6Ω
Package TO-92
Ordering Code Q62702-S499 Q62702-S007 Q62702-S2  Siemens Semiconductor Group transistor | | |
| 2 | BSS100 | N-Channel Logic Level Enhancement Mode Field Effect Transistor September 1996
BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces  Fairchild Semiconductor transistor | | |
| 3 | BSS101 | SIPMOS Small-Signal Transistor BSS 101
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 101 Type BSS 101 BSS 101
Pin 2 G Marking SS 101
Pin 3 D
VDS
240 V
ID
0.13 A
RDS(on)
16 Ω
Package TO-92
Ordering Code Q62702-S493 Q62702-S636
Tape and Re  Siemens Semiconductor transistor | | |
| 4 | BSS110 | P-Channel Enhancement Mode Field Effect Transistor May 1999
BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st Fairchild Semiconductor transistor | | |
| 5 | BSS110 | SIPMOS Small-Signal Transistor BSS 110
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-2.0 V
Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D
VDS
-50 V
ID
-0.17 A
RDS(on)
10 Ω
Package TO-92
Ordering Code Q62702-S500 Q62702-S278 Q67 Siemens Semiconductor transistor | | |
| 6 | BSS110 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS110 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC07 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
F  NXP Semiconductors transistor | | |
| 7 | BSS119 | SIPMOS Small-Signal Transistor (N channel Enhancement mode) BSS 119
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V
Pin 1 G
Pin 2 S
Pin 3 D
Type BSS 119 Type BSS 119
VDS
100 V
ID
0.17 A
RDS(on)
6Ω
Package SOT-23
Marking sSH
Ordering Code Q67000-S007
Tape and Reel Information E6327
Maximum Ratings Siemens Semiconductor Group transistor | |
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