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BSS77 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO
BSS77 BSS78 CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH VOLTAGE TRANSISTOR NPN SILICON J MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°
T MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THER
LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) P BSS76 HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES • Hermetic Metal Package • Screening Options Available 0.48 (0.019) 0.41 (0.016) dia. 12.7 (
BSS74 BSS75 BSS76 DATA SHEET PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications. MAXIMUM
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