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Datasheet BSS63 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | BSS63 | HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage R BE = 10 kn
—Collector Current Continuous
Symbol VCEO VCER
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T/ = 25°C Derate above 25°C
Storage Temperature
PD Tstg
•Thermal Resistance J |
 Motorola Semiconductors |
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| 12 | BSS63 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEB |
 KEC |
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| 11 | BSS63 | PNP high-voltage transistor DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BSS63 PNP high-voltage transistor
Product specification Supersedes data of 1997 Jul 03 1999 Apr 15
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES • Low current (max. 100 mA) • High voltage (max. |
 NXP Semiconductors |
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| 10 | BSS63 | SMALL SIGNAL PNP TRANSISTOR BSS63
SMALL SIGNAL PNP TRANSISTOR
Type BSS63
s
Marking T3
s
s
s
SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE LOW FREQUENCY APPLICATONS NPN COMPLEMENT IS BSS64
2 3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE |
 STMicroelectronics |
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