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Datasheet BSS138-G Equivalent ( PDF )

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1 BSS138-G   MOSFET ( Transistor )

MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features -High density cell design for extremely low RDS(ON). -Rugged and Reliable. Mechanical data -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. Circuit diagram D G S 1 : Gate 2 : Source 3 : Drain 0.05
Comchip
Comchip
datasheet BSS138-G pdf

BSS13 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
BSS138

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 PARTMARKING DETAIL 7 – SS BSS138 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb
Zetex Semiconductors
Zetex Semiconductors
datasheet pdf - Zetex Semiconductors
BSS138

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)  • Qualified to A
Diodes Incorporated
Diodes Incorporated
datasheet pdf - Diodes Incorporated
BSS138

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:///
National Semiconductor
National Semiconductor
datasheet pdf - National Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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