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Datasheet BSS138 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 36 | BSS138 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
BSS138
V(BR)DSS
50 V
N-Channel 50-V(D-S) MOSFET
RDS(on)MAX
3.5Ω@10V
6Ω@4.5V
ID
220mA
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaib |
 JCET |
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| 35 | BSS138 | N-CHANNEL MOSFET BSS138
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
输出电阻小、性能高；SOT-23 封装，利于设计安装。 Low RDS(on),rugged and reliable, compact industry standard S |
 BLUE ROCKET ELECTRONICS |
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| 34 | BSS138 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996 PARTMARKING DETAIL 7 – SS
BSS138
S
D G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25°C Operating and |
 Zetex Semiconductors |
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| 33 | BSS138 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 138
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G Type BSS 138 Type BSS 138 BSS 138
Pin 2 S Marking SSs
Pin 3 D
VDS
50 V
ID
0.22 A
RDS(on)
3.5 Ω
Package SOT-23
Ordering Code Q67000-S566 Q67000-S216
Tape and Reel |
 Siemens Semiconductor Group |
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