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Datasheet BSS127 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BSS127 | Small-Signal-Transistor Type
SIPMOS® Small-Signal-Transistor
Features • n-channel • enhancement mode • Logic level (4.5V rated) • dv /dt rated • 100%lead-free; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
BSS127
600 V 500 � |
 Infineon Technologies |
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| 2 | BSS127 | N-CHANNEL ENHANCEMENT MODE FIELD MOSFET BSS127
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V(BR)DSS 600V
RDS(ON) 160Ω @ VGS = 10V
Package
SC59 SOT23
ID TA = +25°C
70mA
Description
This new generation uses advanced planar technology MOSFET, provide excellent high Voltage and fast switching, making it ideal for small-si |
 Diodes Incorporated |
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| 1 | BSS127 | SMALL-SIGNAL-TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD BSS127
0.021A, 600V SMALL-SIGNAL-TRANSISTOR
DESCRIPTION
The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.
FEATURES
* RDS(ON)<600Ω @ VGS= 4. |
 Unisonic Technologies |
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