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Product Summary V(BR)DSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • Sm
CYStech Electronics Corp. N-CHANNEL MOSFET BVDSS ID Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2013.10.17 Page No. : 1/8 100V VGS=10V, ID=700mA 1.7A 290mΩ 310mΩ 260mΩ 280mΩ BSS123N3 Description RDSON(TYP) VGS=4V, ID=400mA VGS=10V, ID=170mA VGS=4V, ID=170mA The BSS123N3 is a
CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BSS123BKN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=100mA RDS(ON)@VGS=4.5V, ID=100mA 100V 0.19A 2.8Ω(typ) 3.0Ω(typ) Features • ESD protected gate �
BSS123 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 极低的 RDS(ON)为高密度电池设计。 High density cell design for extremely low RDS(ON). 用途 / Applications 适用�
BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V • High Density Cell Design for Low RDS(ON) •
BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Symbol VDSS VGS VGSM ID IDM Value 100 ±20 ±
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