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Datasheet BSR30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BSR30 | PNP Medium Power Transistors SMD Type
Transistors
PNP Medium Power Transistors BSR30,BSR31,BSR33
Features
High current (max. 1 A) Low voltage (max. 80 V).
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
Unit: mm 1.50+0.1
-0.1
0.44+0.1 -0.1
+0.10.80 -0.1
+0.12.60 -0.1
+0.10.40 |
 Kexin |
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| 3 | BSR30 | PNP medium power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSR30; BSR31; BSR33 PNP medium power transistors
Product specification Supersedes data of 1997 Apr 01 1999 Apr 26
Philips Semiconductors
Product specification
PNP medium power transistors
FEATURES • High current (max. 1 A) • Low vo |
 NXP Semiconductors |
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| 2 | BSR30 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 4 – JUNE 1996 COMPLEMENTARY TYPE – PARTMARKING DETAIL – 7 BSR40 BR1
BSR30
C
E C B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Cu |
 Zetex Semiconductors |
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| 1 | BSR302N | Small-Signal-Transistor OptiMOS®2 Small-Signal-Transistor
Features • N-channel • Enhancement mode • Logic level (4.5V) • Avalanche rated • Footprint compatible to SOT23 • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101
BSR302N
Product Summary
V DS R DS(on),max
ID
V |
 Infineon Technologies |
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