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BSP322P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID -100 800 -1 V mΩ A PG-SOT-223 Type BSP322P Package PG-SOT-223 Tape and R
BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN CO
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP31; BSP32; BSP33 PNP medium power transistors Product specification Supersedes data of 1997 Apr 08 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistors FEATURES • High current (max. 1 A) • Low vo
Rev. 1.0 BSP324 SIPMOS ® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS RDS(on) ID 400 25 0.17 SOT-223 V Ω A Type BSP324 Package SOT-223 Ordering Code Q67000-S215 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP32
SIPMOS® Small-Signal-Transistor Features • N channel • BSP 320S VDS RDS(on) ID 4 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V Ω A Enhancement mode • Avalanche rated • dv/dt rated 3 2 1 VPS05163 Type BSP320S Package SOT
BSP 30 ... BSP 33 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weight
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