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BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. F
SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Product Su
BSP16T1 Preferred Device High Voltage Transistors PNP Silicon Features •ăPb-Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) VCEO VC
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage BSP15 C COMPLEMENTARY TYPE: PARTMARKING DETAIL: BSP20 BSP15 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Volt
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C BSP15 COMPLEMENTARY TYPE: PARTMARKING DETAIL: BSP20 BSP15 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volt
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct inter
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