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Datasheet BSO303 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | BSO303 | OptiMOS -P Small-Signal-Transistor Preliminary data
BSO303P
OptiMOS-P Small-Signal-Transistor
Feature • Dual P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated
S1 G1 S2 G2 1 2 3 4 Top View
Product Summary VDS RDS(on) ID
8 7 6 5
-30 21 -8.2
V mΩ A
D1 D1 D2 D |
Infineon Technologies AG |
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3 | BSO303 | OptiMOS -P Small-Signal-Transistor Preliminary data
BSO303P
OptiMOS-P Small-Signal-Transistor
Feature • Dual P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated
S1 G1 S2 G2 1 2 3 4 Top View
Product Summary VDS RDS(on) ID
8 7 6 5
-30 21 -8.2
V mΩ A
D1 D1 D2 D |
Infineon Technologies AG |
|
2 | BSO303P | OptiMOS -P Small-Signal-Transistor Preliminary data
BSO303P
OptiMOS-P Small-Signal-Transistor
Feature • Dual P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated
S1 G1 S2 G2 1 2 3 4 Top View
Product Summary VDS RDS(on) ID
8 7 6 5
-30 21 -8.2
V mΩ A
D1 D1 D2 D |
Infineon Technologies AG |
|
1 | BSO303SP | OptiMOS -P Small-Signal-Transistor Preliminary data
BSO303SP
OptiMOS-P Small-Signal-Transistor
Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated
S S S G 1 2 3 4 Top View
Product Summary VDS RDS(on) ID -30 21 -8.9 V mΩ A
8 7 6 5
D D D D
SIS00062
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Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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