BSO080P03SH
Infineon Technologies
Power-TransistorOptiMOS™-P Power-Transistor
Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-2
BSO080P03NS3G
Power-TransistorOptiMOS™3 P3-Power-Transistor
Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • applications: battery management, load switc
Infineon Technologies
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BSO080P03NS3EG
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Infineon Technologies
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BSO080P03S
OptiMOS-P Small-Signal-TransistorBSO080P03S
OptiMOS®-P Small-Signal-Transistor
Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalanche rated • dv /dt rated • Ideal for fast switching buck converter
Product Summary V DS R DS(on),max ID -30 8 -14.9 V mΩ A
P-DSO-8
Type BSO0
Infineon Technologies AG
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