BSO080P03NS3G
Infineon Technologies
Power-TransistorOptiMOS™3 P3-Power-Transistor
Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • appl
BSO080P03NS3EG
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Infineon Technologies
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