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Datasheet BSM50GD120DN2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BSM50GD120DN2 | IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) BSM 50 GD 120 DN2
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
P |
 Siemens Semiconductor Group |
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| 2 | BSM50GD120DN2E3226 | IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) BSM 50 GD120DN2E3226
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal
Type BSM 50 GD120DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Co |
Siemens Semiconductor Group |
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| 1 | BSM50GD120DN2G | IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) BSM 50 GD 120 DN2G
IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 |
Siemens Semiconductor Group |
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