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Datasheet BSM200GB120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | BSM200GB120 | IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) BSM 200 GB 120 DL
IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1 |
Siemens Semiconductor Group |
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3 | BSM200GB120DL | IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) BSM 200 GB 120 DL
IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1 |
Siemens Semiconductor Group |
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2 | BSM200GB120DLC | IGBT Module Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM200GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Perio |
eupec |
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1 | BSM200GB120DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) BSM 200 GB 120 DN2
IGBT Power Module
• Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate
Type BSM 200 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67070-A2300-A |
Siemens Semiconductor Group |
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