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Datasheet BSM150GB120DN2E3166 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | BSM150GB120DN2E3166 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) BSM150GB120DN2E3166
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM150GB120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1 |
 Siemens Semiconductor Group |
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BSM150GB120DN2E3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| BSM150GB120DN2E3166 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens Semiconductor Group |
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