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Datasheet BSH121 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | BSH121 | N-channel enhancement mode field-effect transistor BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 August 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323.
2. Features
s s s s TrenchMOS |
NXP Semiconductors |
BSH Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
BSH103 | N-channel enhancement mode MOS transistor |
NXP Semiconductors |
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BSH201 | P-channel enhancement mode MOS transistor |
NXP Semiconductors |
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BSH108 | N-channel enhancement mode field-effect transistor |
NXP Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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