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BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 M3D088 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH114 in SOT23. 2. Features s s s s
BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. 2. Features s s s s TrenchMOS
BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. 2. Features s s s s TrenchMOS™ t
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH107 SYMBOL d QUICK REFERENCE DATA VDS = 20 V ID = 1.75 A g RDS(ON) ≤ 90 mΩ
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH106 SYMBOL d QUICK REFERENCE DATA VDS = 20 V ID = 1.05 A g RDS(ON) ≤ 250 m�
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH102 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08 Philips Semiconductors Product specification N-channel enhancement mode MOS
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