Datasheet BSC070N10NS3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BSC070N10NS3G	Power-Transistor OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plati	Infineon Technologies

BSC070N10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BSC070N10NS3G	Power-Transistor OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature �	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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