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Datasheet BSB104N08NP3G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BSB104N08NP3G | Power MOSFET, Transistor OptiMOS™3 Power-MOSFET
Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Low profile (<0.7mm) • Dual sided cooling • Low parasitic inductance • N-channel, normal level
BSB104N08NP3 G
Product Summary
VDS RDS(on),max ID
80 V 10.4 |  Infineon | mosfet |
BSB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BSB008NE2LX | n-Channel Power MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V BSB008NE2LX
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,25V BSB008NE2LX
1Description
Features
•Optimizedfore-fuseandOR-ingapplication •UltralowRds Infineon mosfet | | |
| 2 | BSB012N03LX3G | Power MOSFET, Transistor BSB012N03LX3 G
OptiMOSTM3 Power-MOSFET
Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% Rg Tested • D Infineon mosfet | | |
| 3 | BSB012NE2LX | n-Channel Power MOSFET n-Channel Power MOSFET
OptiMOS™ BSB012NE2LX
Data Sheet
2.0, 2011-03-18 Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET BSB012NE2LX
1
Description
OptiMOS™25V products are class leading power MOSFETs for highest power density and energy effic Infineon mosfet | | |
| 4 | BSB012NE2LXI | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V BSB012NE2LXI
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,25V BSB012NE2LXI
1Description
Features
•OptimizedSyncFETforhighperformanceBuckconverter •I Infineon mosfet | | |
| 5 | BSB013NE2LXI | n-Channel Power MOSFET BSB013NE2LXI
OptiMOSTM Power-MOSFET
Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
25 1.3 163 39 62
• Do Infineon mosfet | | |
| 6 | BSB014N04LX3G | n-Channel Power MOSFET n-Channel Power MOSFET
OptiMOS™ BSB014N04LX3 G
Data Sheet
2.3, 2011-05-24 Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET BSB014N04LX3 G
1 Description
OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and outpu Infineon mosfet | | |
| 7 | BSB015N04NX3G | n-Channel Power MOSFET n-Channel Power MOSFET
OptiMOS™ BSB015N04NX3 G
Data Sheet
2.4, 2011-05-24 Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET BSB015N04NX3 G
1 Description
OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and outpu Infineon mosfet | |
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