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Datasheet BS616UV8011 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | BS616UV8011 | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616UV8011
• Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current � |
 Brilliance Semiconductor |
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| 6 | BS616UV8011BC | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616UV8011
• Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current � |
Brilliance Semiconductor |
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| 5 | BS616UV8011BI | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616UV8011
• Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current � |
Brilliance Semiconductor |
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| 4 | BS616UV8011DC | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616UV8011
• Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current � |
Brilliance Semiconductor |
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