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Datasheet BS616UV8010 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BS616UV8010 | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616UV8010
• Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.4uA (Typ.) CMOS standby current Vcc |
 Brilliance Semiconductor |
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| 2 | BS616UV8010BC | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616UV8010
• Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.4uA (Typ.) CMOS standby current Vcc |
Brilliance Semiconductor |
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| 1 | BS616UV8010BI | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616UV8010
• Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.4uA (Typ.) CMOS standby current Vcc |
Brilliance Semiconductor |
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