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Datasheet BS616UV1610FI Equivalent ( PDF )

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1 BS616UV1610FI   Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS techn
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet BS616UV1610FI pdf

BS616UV161 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
BS616UV1610FI

Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage.
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet pdf - Brilliance Semiconductor
BS616UV1610FC

Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage.
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet pdf - Brilliance Semiconductor
BS616UV1610BI

Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage.
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet pdf - Brilliance Semiconductor


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SPS122

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