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Datasheet BS616UV1610 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
5 BS616UV1610   Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS techn
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet BS616UV1610 pdf
4 BS616UV1610BC   Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS techn
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet BS616UV1610BC pdf
3 BS616UV1610BI   Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS techn
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet BS616UV1610BI pdf
2 BS616UV1610FC   Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS techn
 Brilliance Semiconductor
Brilliance Semiconductor		 datasheet BS616UV1610FC pdf


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SPS122

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