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Datasheet BS616LV8012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BS616LV8012 | Very Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616LV8012
• Very low operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5. |
 Brilliance Semiconductor |
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| 2 | BS616LV8012BC | Very Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616LV8012
• Very low operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5. |
Brilliance Semiconductor |
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| 1 | BS616LV8012BI | Very Low Power/Voltage CMOS SRAM 512K X 16 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616LV8012
• Very low operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5. |
Brilliance Semiconductor |
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