Datasheet BS616LV4010EI Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BS616LV4010EI	Very Low Power/Voltage CMOS SRAM 256K X 16 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit DESCRIPTION BS616LV4010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current • Hi	Brilliance Semiconductor

BS616LV401 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BS616LV4010	Very Low Power/Voltage CMOS SRAM 256K X 16 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit DESCRIPTION BS616LV4010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS st	Brilliance Semiconductor
BS616LV4017	Very Low Power/Voltage CMOS SRAM 256K X 16 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4017 • Wide Vcc operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 26mA (@55ns) operating current I-grade: 27mA (@55ns) operating current C-grade: 21mA (@70ns) operating curr	BSI
BS616LV4011EI	Very Low Power/Voltage CMOS SRAM 256K X 16 bit	Brilliance Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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