Datasheet BS250KL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BS250KL	P-Channel 60-V (D-S) MOSFET New Product TP0610KL/BS250KL Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −60 rDS(on) (W) 6 @ VGS = −10 V 10 @ VGS = −4.5 V VGS(th) (V) −1 to −3.0 ID (A) −0.27 −0.21 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Driv	Vishay

BS25 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BS250	P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation P-channel enhancement mode vertical D-MOS transistor DESCRI	NXP Semiconductors
BS250	P-Channel 60-V (D-S) MOSFET TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number TP0610L TP0610T VP0610L VP0610T BS250 V(BR)DSS Min (V) −60 −60 −60 −60 −45 rDS(on) Max (W) 10 @ VGS = −10 V 10 @ VGS = −10 V 10 @ VGS = −10 V 10 @ VGS = −10 V	Vishay Siliconix
BS250P	P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 45 Volt VDS * RDS(on)=14Ω BS250P D G S REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb =25°C Pulsed Drain Current Gate-Source	Zetex Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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